BGB707L7ESD - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BGB707L7ESD
Manufacturer

Infineon
ChipWorker Part#

CW478782958
Package

TSLP-7-1
Description

C Wideband MMIC LNA with Integrated ESD Protection
Documentation

Datasheet

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BGB707L7ESD Specifications

Attribute	Attribute Value

Part Number	BGB707L7ESD
Manufacturer	Infineon
ChipWorker Part#	CW478782958
Documentation	Datasheet
Case/Package	TSLP-7-1
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Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Description:
The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of applications. The device is based upon Infineon Technologies cost effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package
Summary of Features:
High performance general purpose wide band MMIC LNA
ESD protection integrated for all pins (3 kV for RF input vs. GND, 2 kV for all other pin combinations, HBM)
Integrated active biasing circuit enables stable operation point against temperature- and processing-variations
Excellent noise figure from Infineon´s reliable high volume SiGe:C technology
High gain and linearity at low current consumption
Operation voltage: 1.8 V to 4.0 V
Adjustable operation current 2.1 mA to 25 mA by external resistor
Power-off function
Very small and leadless package TSLP-7-1, 2.0 x 1.3 x 0.4 mm3
Pb-free (RoHS compliant) and halogen-free (WEEE compliant) package Applications

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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