BGU8103X - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BGU8103X
Manufacturer

NXP
ChipWorker Part#

CW43470600
Category

Amplifier chip
Package

XFDFN-6
Description

GPS Amp Single Low Noise 1.61GHz 3.1V 6Pin XSON T/R
Documentation

Datasheet

BGU8103X Global Supplier

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BGU8103X Specifications

Attribute	Attribute Value

Part Number	BGU8103X
Manufacturer	NXP
ChipWorker Part#	CW43470600
Category	Amplifier chip
Documentation	Datasheet
Number of Pins	6 Pin
Case/Package	XFDFN-6
Frequency	1.559GHz ~ 1.61GHz
Supply Current	1.2 mA
Number of Channels	1 Channel
Number of Positions	6 Position
Power Dissipation	55 mW
Gain	17.5 dB
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	55 mW
Supply Voltage	1.5V ~ 3.1V
Supply Voltage (Max)	3.1 V
Supply Voltage (Min)	1.5 V
	expand all
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Overview
The BGU8103 is, also known as the GPS1301M, an ultra low current and Low-Noise Amplifier (LNA) for GNSS receiver applications. The BGU8103 is available in a small plastic 6-pin extremely thin leadless package. The BGU8103 requires only one external matching inductor.
The BGU8103 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for ultra low power consumption and optimal performance when jamming signals from co-existing cellular transmitters are present. At low jamming power levels, it delivers 17.5 dB gain at a noise figure of 0.80 dB and a supply current of 1.2 mA. During high jamming power levels, resulting for example from a cellular transmit burst, it temporarily increases its bias current to improve sensitivity.
MoreLess
## Features
* Optimized performance at a low supply current of 1.2 mA
* Covers full GNSS L1 band, from 1559 MHz to 1610 MHz
* Noise figure = 0.80 dB
* Gain 17.5 dB
* Input 1 dB compression point of ‒16 dBm
* Out of band IP3i of ‒8 dBm
* Supply voltage 1.5 V to 3.1 V
* Self-shielding package concept
* Integrated supply decoupling capacitor
* Power-down mode current consumption < 1 μA
* Integrated temperature stabilized bias for easy design
* Requires only one input matching inductor
* Integrated DC blocking at both RF input and output
* ESD protection on all pins (HBM > 2 kV)
* Integrated matching for the output
* Available in a 6-pin leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
* 180 GHz transit frequency - SiGe:C technology
* Moisture sensitivity level 1
## Target Applications
* Smart phones
* Feature phones
* Tablets
* Digital still cameras
* Digital video cameras
* RF front-end modules
* Complete GNSS modules
* Personal health applications
## Features

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- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- X-ray inspection
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- Electrical testing
- Surface testing

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