BGU8L1X - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BGU8L1X
Manufacturer

NXP
ChipWorker Part#

CW38301193
Category

Amplifier chip
Package

XFDFN-6
Description

BGU8007 Series 1.5 - 3.1V 960MHz 14dB Low Noise Amplifier - XSON-6
Documentation

Datasheet

BGU8L1X Global Supplier

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BGU8L1X Specifications

Attribute	Attribute Value

Part Number	BGU8L1X
Manufacturer	NXP
ChipWorker Part#	CW38301193
Category	Amplifier chip
Documentation	Datasheet
Number of Pins	6 Pin
Case/Package	XFDFN-6
Frequency	728MHz ~ 960MHz
Supply Current	4.6 mA
Number of Channels	1 Channel
Number of Positions	6 Position
Power Dissipation	55 mW
Gain	14.5 dB
Test Frequency	880 MHz
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	55 mW
Supply Voltage	1.5V ~ 3.1V
Supply Voltage (Max)	3.1 V
Supply Voltage (Min)	1.5 V
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Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Overview
The BGU8L1 is, also known as the LTE1001L, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8L1 requires one external matching inductor.
The BGU8L1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels, it delivers 14 dB gain at a noise figure of 0.7 dB. During high-power levels, it temporarily increases its bias current to improve sensitivity.
The BGU8L1 is optimized for 728 MHz to 960 MHz.
MoreLess
## Features
* Operating frequency from 728 MHz to 960 MHz
* Noise figure = 0.7 dB
* Gain = 14 dB
* High input 1 dB compression point of -3 dBm
* High in band IP3i of 2 dBm
* Supply voltage 1.5 V to 3.1 V
* Self-shielding package concept
* Integrated supply decoupling capacitor
* Optimized performance at a supply current of 4.6 mA
* Power-down mode current consumption < 1 μA
* Integrated temperature stabilized bias for easy design
* Require only one input matching inductor
* Output DC decoupled
* ESD protection on all pins (HBM > 2 kV)
* Integrated matching for the output
* Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
* 180 GHz transit frequency - SiGe:C technology
* Moisture sensitivity level of 1
## Target Applications
* LNA for LTE reception in smart phones
* Feature phones
* Tablet PCs
* RF front-end modules
## Features
* RF front-end modules

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