BSC014N06NSATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSC014N06NSATMA1
Manufacturer

Infineon
ChipWorker Part#

CW4427025
Category

MOSFET, MOSFET Transistor
Package

PG-TDSON-8
Description

TDSON N-CH 60V 30A
Documentation

Datasheet

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BSC014N06NSATMA1 Specifications

Attribute	Attribute Value

Part Number	BSC014N06NSATMA1
Manufacturer	Infineon
ChipWorker Part#	CW4427025
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-TDSON-8
Power Rating	156 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0012 Ω
Polarity	N-Channel
Power Dissipation	156 W
Threshold Voltage	2.8 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	30A
Rise Time	10 ns
Input Capacitance (Ciss)	6500pF @30V(Vds)
Fall Time	11 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta), 156W (Tc)
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Size-Length	6 mm
Size-Width	5 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

The BSC014N06NS is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. The MOSFET features 40% lower RDS (on) than alternative devices. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
Highest system efficiency
Less paralleling required
Increased power density
Saving space
Very low voltage overshoot
Superior thermal resistance

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