BSC035N04LSGATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSC035N04LSGATMA1
Manufacturer

Infineon
ChipWorker Part#

CW10482636
Category

MOSFET, MOSFET Transistor
Package

PG-TDSON-8
Description

TDSON N-CH 40V 21A
Documentation

Datasheet

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BSC035N04LSGATMA1 Specifications

Attribute	Attribute Value

Part Number	BSC035N04LSGATMA1
Manufacturer	Infineon
ChipWorker Part#	CW10482636
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-TDSON-8
Power Rating	69 W
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0029 Ω
Polarity	N-Channel
Power Dissipation	69 W
Threshold Voltage	2 V
Input Capacitance	3800 pF
Drain to Source Voltage (Vds)	40 V
Breakdown Voltage (Drain to Source)	40 V
Continuous Drain Current (Ids)	21A
Rise Time	4.6 ns
Input Capacitance (Ciss)	3800pF @20V(Vds)
Fall Time	5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta), 69W (Tc)
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Size-Length	5.9 mm
Size-Width	5.15 mm
Size-Height	1.27 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The BSC035N04LS G is an OptiMOS™ N-channel Power MOSFET perfect choice for synchronous rectification in switched mode power supplies (SMPS). In addition it can be used for a broad range of industrial applications including fast switching DC-to-DC converter.
Excellent gate charge x RDS (ON) product (FOM)
Very low ON-resistance RDS (ON)
Ideal for fast switching applications
MSL1 rated
Highest system efficiency
Less paralleling required
Increased power density
Very low voltage overshoot
Logic level
Superior thermal resistance
100% Avalanche tested
Halogen-free, Green device
Qualified according to JEDEC for target applications

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