BSC120N03MS G - Infineon
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoBSC120N03MS G
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ManufacturerInfineon
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ChipWorker Part#CW72977266
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CategoryMOSFET, MOSFET Transistor
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PackagePG-TSDSON
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DescriptionMOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M
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DocumentationDatasheet
Payment Methods and Delivery
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BSC120N03MS G Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | BSC120N03MS G |
| Manufacturer | Infineon |
| ChipWorker Part# | CW72977266 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | PG-TSDSON |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 10 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 28 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Rise Time | 4.4 ns |
| Input Capacitance (Ciss) | 1100pF @15V(Vds) |
| Input Power (Max) | 28 W |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 28 W |
| expand all | |
| Size-Length | 5.9 mm |
| Size-Width | 5.15 mm |
| Size-Height | 1.27 mm |
| Operating Temperature | -55℃ ~ 150℃ |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/12/17 |
Product Description
- Description:
- With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.
- Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life.
- Available in halfbridge configuration (power stage 5x6)
- Summary of Features:
- Ultra low gate and output charge
- Lowest on-state resistance in small footprint packages
- Easy to design in
- Benefits:
- Increased battery lifetime
- Improved EMI behavior making external snubber networks obsolete
- Saving costs
- Saving space
- Reducing power losses
Delivery
Chipworker Certification
Ordering Information
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