BSC160N10NS3 G - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSC160N10NS3 G
Manufacturer

Infineon
ChipWorker Part#

CW26456759
Category

MOSFET, MOSFET Transistor
Package

TDSON-8
Description

Single N-Channel 100V 33mOhm 25NC 60W OptiMOS SMT Mosfet - TDSON-8
Documentation

Datasheet

BSC160N10NS3 G Global Supplier

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BSC160N10NS3 G Specifications

Attribute	Attribute Value

Part Number	BSC160N10NS3 G
Manufacturer	Infineon
ChipWorker Part#	CW26456759
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	TDSON-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0139 Ω
Polarity	N-Channel
Power Dissipation	60 W
Threshold Voltage	2.7 V
Drain to Source Voltage (Vds)	100 V
Rise Time	15 ns
Input Capacitance (Ciss)	1700pF @50V(Vds)
Input Power (Max)	60 W
Fall Time	5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	60000 mW
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Size-Length	5.9 mm
Size-Width	5.15 mm
Size-Height	1.27 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Summary of Features:
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2
Benefits:
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products

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