BSC160N10NS3GATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSC160N10NS3GATMA1
Manufacturer

Infineon
ChipWorker Part#

CW2281733
Category

MOSFET, MOSFET Transistor
Package

PG-TDSON-8
Description

TDSON N-CH 100V 8.8A
Documentation

Datasheet

BSC160N10NS3GATMA1 Global Supplier

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BSC160N10NS3GATMA1 Specifications

Attribute	Attribute Value

Part Number	BSC160N10NS3GATMA1
Manufacturer	Infineon
ChipWorker Part#	CW2281733
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-TDSON-8
Power Rating	60 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0139 Ω
Polarity	N-Channel
Power Dissipation	60 W
Threshold Voltage	2.7 V
Input Capacitance	1300 pF
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	8.8A
Rise Time	15 ns
Input Capacitance (Ciss)	1300pF @50V(Vds)
Fall Time	5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	60W (Tc)
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Size-Length	5.35 mm
Size-Width	6.35 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The BSC160N10NS3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
Excellent switching performance
World"s lowest RDS (ON)
Very low Qg and Qgd
Excellent gate charge x RDS (ON) product (FOM)
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
Halogen-free
MSL1 rated 2

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