BSC160N15NS5ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSC160N15NS5ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW75238021
Category

MOSFET, MOSFET Transistor
Package

TDSON-8
Description

TDSON N-CH 100V 8.8A
Documentation

Datasheet

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BSC160N15NS5ATMA1 Specifications

Attribute	Attribute Value

Part Number	BSC160N15NS5ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW75238021
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Number of Pins	8 Pin
Case/Package	TDSON-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0137 Ω
Polarity	N-CH
Power Dissipation	96 W
Threshold Voltage	3.8 V
Drain to Source Voltage (Vds)	150 V
Continuous Drain Current (Ids)	8.8A
Rise Time	3 ns
Input Capacitance (Ciss)	1370pF @75V(Vds)
Fall Time	2.6 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	96000 mW
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Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status

Product Description

Description:
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
Summary of Features:
Lower R DS(on) without compromising FOM gd and FOM oss
Lower output charge
Ultra-low reverse recovery charge
Increased commutation ruggedness
Higher switching frequency possible
Benefits:
Reduced paralleling
Size reduction enabled with SuperSO8 best-in-class
Higher power density designs
More rugged products
System cost reduction
Improved EMI behavior

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