BSM120D12P2C005 - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSM120D12P2C005
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW37876696
Category

MOSFET, MOSFET Transistor
Package

Module
Description

Trans SiC MOSFET N-CH 1.2kV 120A 10Pin Case C Tray
Documentation

Datasheet

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BSM120D12P2C005 Specifications

Attribute	Attribute Value

Part Number	BSM120D12P2C005
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW37876696
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Number of Pins	10 Pin
Case/Package	Module
Number of Channels	1 Channel
Polarity	N-Channel
Power Dissipation	780 W
Threshold Voltage	2.7 V
Drain to Source Voltage (Vds)	1.2 kV
Rise Time	50 ns
Input Capacitance (Ciss)	14000pF @10V(Vds)
Input Power (Max)	780 W
Fall Time	60 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	935000 mW
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Size-Length	122 mm
Size-Width	45.6 mm
Size-Height	21.1 mm
Operating Temperature	-40℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The BSM120D12P2C005 is a N-channel SiC Power Module designed for use with inverter, converter, photovoltaic, wind power generation and induction heating equipment applications. The device offers low surge, low switching loss and high-speed switching possible, reduced temperature dependence.

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