BSP16T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSP16T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW16017136
Category

BJT Transistor, BJT
Package

TO-261-4
Description

SOT-223 PNP 300V 0.1A
Documentation

Datasheet

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BSP16T1G Specifications

Attribute	Attribute Value

Part Number	BSP16T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW16017136
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	15 MHz
Voltage Rating (DC)	-300 V
Current Rating	-1.00 A
Number of Positions	4 Position
Polarity	PNP
Power Dissipation	1.5 W
Gain Bandwidth Product	15 MHz
Breakdown Voltage (Collector to Emitter)	300 V
Continuous Collector Current	0.1A
hFE Min	30 @50mA, 10V
Input Power (Max)	1.5 W
DC Current Gain (hFE)	30
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1500 mW
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.57 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP BSP16T1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.

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