BSS123LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSS123LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW12900
Category

MOSFET, MOSFET Transistor
Package

SOT-23-3
Description

SOT-23 N-CH 100V 0.17A
Documentation

Datasheet

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BSS123LT1G Specifications

Attribute	Attribute Value

Part Number	BSS123LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW12900
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	100 V
Current Rating	170 mA
Power Rating	0.225 W
Halogen Free Status	Halogen Free
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	6 Ω
Polarity	N-Channel
Power Dissipation	225 mW
Threshold Voltage	800 mV
Input Capacitance	20pF @25V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	170 mA
Maximum Forward Voltage (Max)	1.3 V
Input Capacitance (Ciss)	20pF @25V(Vds)
Input Power (Max)	225 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	225mW (Ta)
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Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	0.94 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

The BSS123LT1G is a N-channel Power MOSFET with drain source voltage at 100VDC and drain current at 170mA.
AEC-Q101 Qualified
PPAP capable

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