BSS84PH6327XTSA2 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSS84PH6327XTSA2
Manufacturer

Infineon
ChipWorker Part#

CW1430960
Category

MOSFET, MOSFET Transistor
Package

SOT-23-3
Description

SOT-23P-CH 60V 0.17A
Documentation

Datasheet

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BSS84PH6327XTSA2 Specifications

Attribute	Attribute Value

Part Number	BSS84PH6327XTSA2
Manufacturer	Infineon
ChipWorker Part#	CW1430960
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Power Rating	0.36 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	8 Ω
Polarity	P-Channel
Power Dissipation	360 mW
Threshold Voltage	1.5 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	0.17A
Rise Time	16.2 ns
Input Capacitance (Ciss)	15pF @25V(Vds)
Fall Time	20.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	360 mW
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Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The BSS84P H6327 from Infineon is surface mount, P channel logic level enhancement mode SIPMOS small signal transistor in SOT-23 package. The device features dv/dt and Avalanche ratings.
Automotive grade AEC-Q101 qualified
Drain to source voltage (Vds) of -60V
Gate to source voltage of ±20V
Continuous drain current (Id) of -170mA
Power dissipation (pd) of 360mW
Operating temperature range -55°C to 150°C
Low on state resistance of 8ohm at Vgs -4.5V

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