BSZ086P03NS3EGATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSZ086P03NS3EGATMA1
Manufacturer

Infineon
ChipWorker Part#

CW3853100
Category

MOSFET, MOSFET Transistor
Package

TSDSON-8
Description

TSDSON P-CH 30V 13.5A
Documentation

Datasheet

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BSZ086P03NS3EGATMA1 Specifications

Attribute	Attribute Value

Part Number	BSZ086P03NS3EGATMA1
Manufacturer	Infineon
ChipWorker Part#	CW3853100
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	TSDSON-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0065 Ω
Polarity	P-Channel
Power Dissipation	2.1 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	13.5A
Rise Time	46 ns
Input Capacitance (Ciss)	3190pF @15V(Vds)
Fall Time	8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	69 W
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Size-Length	3.4 mm
Size-Width	3.4 mm
Size-Height	1.1 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The BSZ086P03NS3E G is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
Enhancement-mode
Avalanche rated
Qualified to JEDEC for target applications
ESD Protected
Green device

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