BSZ0904NSI - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSZ0904NSI
Manufacturer

Infineon
ChipWorker Part#

CW54528160
Category

MOSFET, MOSFET Transistor
Package

PG-TSDSON-8-FL
Description

TSDSON N-CH 30V 18A
Documentation

Datasheet

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BSZ0904NSI Specifications

Attribute	Attribute Value

Part Number	BSZ0904NSI
Manufacturer	Infineon
ChipWorker Part#	CW54528160
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-TSDSON-8-FL
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0033 Ω
Polarity	N-Channel
Power Dissipation	37 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	18A
Rise Time	4.4 ns
Input Capacitance (Ciss)	1100pF @15V(Vds)
Input Power (Max)	37 W
Fall Time	3 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.1W (Ta), 37W (Tc)
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Size-Length	3.4 mm
Size-Width	3.4 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

Description:
With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life.
Available in halfbridge configuration (power stage 5x6)
Summary of Features:
Ultra low gate and output charge
Lowest on-state resistance in small footprint packages
Easy to design in
Benefits:
Increased battery lifetime
Improved EMI behavior making external snubber networks obsolete
Saving costs
Saving space
Reducing power losses

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