BSZ100N06LS3GATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSZ100N06LS3GATMA1
Manufacturer

Infineon
ChipWorker Part#

CW12472910
Category

MOSFET, MOSFET Transistor
Package

PG-TSDSON
Description

TSDSON N-CH 60V 11A
Documentation

Datasheet

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BSZ100N06LS3GATMA1 Specifications

Attribute	Attribute Value

Part Number	BSZ100N06LS3GATMA1
Manufacturer	Infineon
ChipWorker Part#	CW12472910
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-TSDSON
Power Rating	50 W
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.008 Ω
Polarity	N-Channel
Power Dissipation	50 W
Threshold Voltage	1.7 V
Input Capacitance	2600 pF
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Continuous Drain Current (Ids)	11A
Rise Time	58 ns
Input Capacitance (Ciss)	2600pF @30V(Vds)
Fall Time	8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.1 W
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Size-Length	3.3 mm
Size-Width	3.3 mm
Size-Height	1.1 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The BSZ100N06LS3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
Highest system efficiency
Less paralleling required
Increased power density
Very low voltage overshoot

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