BSZ100N06NS - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSZ100N06NS
Manufacturer

Infineon
ChipWorker Part#

CW19356433
Category

MOSFET, MOSFET Transistor
Package

PG-TSDSON-8
Description

TSDSON N-CH 60V 40A
Documentation

Datasheet

BSZ100N06NS Global Supplier

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BSZ100N06NS Specifications

Attribute	Attribute Value

Part Number	BSZ100N06NS
Manufacturer	Infineon
ChipWorker Part#	CW19356433
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Number of Pins	8 Pin
Case/Package	PG-TSDSON-8
Drain to Source Resistance (on) (Rds)	10 mΩ
Polarity	N-CH
Power Dissipation	2.1 W
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	40A
Rise Time	2 ns
Input Capacitance (Ciss)	860pF @30V(Vds)
Fall Time	2 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2100 mW
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Size-Length	3.3 mm
Size-Width	3.3 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Summary of Features:
Optimized for synchronous rectification
40% lower R DS(on) than alternative devices
40% improvement of FOM over similar devices
RoHS compliant - halogen free
MSL1 rated
Benefits:
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot

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