BSZ160N10NS3GATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSZ160N10NS3GATMA1
Manufacturer

Infineon
ChipWorker Part#

CW9997840
Category

MOSFET, MOSFET Transistor
Package

PG-TSDSON-8
Description

TSDSON N-CH 100V 8A
Documentation

Datasheet

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BSZ160N10NS3GATMA1 Specifications

Attribute	Attribute Value

Part Number	BSZ160N10NS3GATMA1
Manufacturer	Infineon
ChipWorker Part#	CW9997840
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-TSDSON-8
Power Rating	63 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.014 Ω
Polarity	N-Channel
Power Dissipation	63 W
Threshold Voltage	2.8 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	8A
Rise Time	10 ns
Input Capacitance (Ciss)	1300pF @50V(Vds)
Fall Time	5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.1W (Ta), 63W (Tc)
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Size-Length	3.4 mm
Size-Width	3.4 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The BSZ160N10NS3 G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS (on) and FOM (Figure of Merit). The OptiMOS™ MOSFET offers industry"s lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
Excellent switching performance
Environmentally-friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy to design

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