BU508AF - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BU508AF
Manufacturer

ST Microelectronics
ChipWorker Part#

CW3908650
Category

BJT Transistor, BJT
Package

ISOWATT-218
Description

Trans GP BJT NPN 700V 8A 50000mW 3Pin(3+Tab) ISOWATT218FX Tube
Documentation

Datasheet

BU508AF Global Supplier

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BU508AF Specifications

Attribute	Attribute Value

Part Number	BU508AF
Manufacturer	ST Microelectronics
ChipWorker Part#	CW3908650
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	ISOWATT-218
Polarity	NPN
Power Dissipation	50 W
Breakdown Voltage (Collector to Emitter)	700 V
hFE Min	10 @100mA, 5V
Input Power (Max)	50 W
DC Current Gain (hFE)	30
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	50000 mW
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

* State-of-the-art technology: Diffused collector “Enhanced generation” * Stable performances versus operating temperature variation * Low base-drive requirement * Tigh hFE range at operating collector current * High ruggedness * Fully insulated power package U.L. compliant

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
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- Anti-vibration foam
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