BU808DFI - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BU808DFI
Manufacturer

ST Microelectronics
ChipWorker Part#

CW185927265
Category

BJT Transistor, BJT
Package

ISOWATT-218-3
Description

ISOWATT218 NPN 700V 8A
Documentation

Datasheet

BU808DFI Global Supplier

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BU808DFI Specifications

Attribute	Attribute Value

Part Number	BU808DFI
Manufacturer	ST Microelectronics
ChipWorker Part#	CW185927265
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	ISOWATT-218-3
Voltage Rating (DC)	700 V
Current Rating	8.00 A
Power Rating	50 W
Polarity	NPN
Breakdown Voltage (Collector to Emitter)	700 V
Continuous Collector Current	8A
hFE Min	60 @5A, 5V
Input Power (Max)	52 W
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

DESCRIPTION
The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.
■ STMicroelectronics PREFERRED SALESTYPE
■ NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE
■ HIGH VOLTAGE CAPABILITY ( > 1400 V )
■ HIGH DC CURRENT GAIN ( TYP. 150 )
■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
■ LOW BASE-DRIVE REQUIREMENTS
■ DEDICATED APPLICATION NOTE AN1184
APPLICATIONS
■ COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES.

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- Please check the technical specifications of the products when ordering.
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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
- Income quality control (IQC), 800+ qualified distributors.
- Authorities test the chip to ensure the quality, authenticity and safety of your device.
- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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