BU941ZT - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BU941ZT
Manufacturer

ST Microelectronics
ChipWorker Part#

CW10757792
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220 NPN 350V 15A
Documentation

Datasheet

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BU941ZT Specifications

Attribute	Attribute Value

Part Number	BU941ZT
Manufacturer	ST Microelectronics
ChipWorker Part#	CW10757792
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	350 V
Current Rating	15.0 A
Polarity	NPN
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	350 V
Continuous Collector Current	15A
hFE Min	300 @5A, 10V
Input Power (Max)	150 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	150000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

STMicroelectronics brings you their latest NPN BU941ZT Darlington transistor, a component that can easily provide you with much higher current gain values. This Darlington transistor array"s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 2.2@100mA@8A|2.5@250mA@10A V. This product"s maximum continuous DC collector current is 15 A, while its minimum DC current gain is 300@5A@10 V. It has a maximum collector emitter saturation voltage of 1.8@100mA@8A|1.8@250mA@10A V. Its maximum power dissipation is 150000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 175 °C.

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