BUH150G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BUH150G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW76867327
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 400V 15A
Documentation

Datasheet

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BUH150G Specifications

Attribute	Attribute Value

Part Number	BUH150G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW76867327
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	23 MHz
Voltage Rating (DC)	700 V
Current Rating	15.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	700 V
Continuous Collector Current	15A
hFE Min	8 @10A, 5V
Input Power (Max)	150 W
DC Current Gain (hFE)	22
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	150000 mW
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Size-Length	10.28 mm
Size-Width	4.82 mm
Size-Height	9.28 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This NPN BUH150G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 10 V. Its maximum power dissipation is 150000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 10 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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