BUL45D2G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BUL45D2G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW10310700
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 400V 5A
Documentation

Datasheet

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BUL45D2G Specifications

Attribute	Attribute Value

Part Number	BUL45D2G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW10310700
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	12 MHz
Voltage Rating (DC)	700 V
Current Rating	5.00 A
Power Rating	75 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	75 W
Gain Bandwidth Product	13 MHz
Breakdown Voltage (Collector to Emitter)	400 V
Continuous Collector Current	5A
hFE Min	10 @2A, 1V
hFE Max	34
Input Power (Max)	75 W
DC Current Gain (hFE)	32
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	75000 mW
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Size-Length	10.53 mm
Size-Width	4.83 mm
Size-Height	15.75 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

Jump-start your electronic circuit design with this versatile NPN BUL45D2G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 12 V. Its maximum power dissipation is 75000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 12 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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