BUL743 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BUL743
Manufacturer

ST Microelectronics
ChipWorker Part#

CW54002182
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220 NPN 500V 12A
Documentation

Datasheet

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BUL743 Specifications

Attribute	Attribute Value

Part Number	BUL743
Manufacturer	ST Microelectronics
ChipWorker Part#	CW54002182
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Polarity	NPN
Power Dissipation	100 W
Breakdown Voltage (Collector to Emitter)	500 V
Continuous Collector Current	12A
hFE Min	24 @2A, 3V
Input Power (Max)	100 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	100000 mW
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

If you require a general purpose BJT that can handle high voltages, then the NPN BUL743 BJT, developed by STMicroelectronics, is for you. This bipolar junction transistor"s maximum emitter base voltage is 15 V. Its maximum power dissipation is 100000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 500 V and a maximum emitter base voltage of 15 V.

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