BUL89 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BUL89
Manufacturer

ST Microelectronics
ChipWorker Part#

CW39539770
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220 NPN 400V 12A
Documentation

Datasheet

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BUL89 Specifications

Attribute	Attribute Value

Part Number	BUL89
Manufacturer	ST Microelectronics
ChipWorker Part#	CW39539770
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	400 V
Current Rating	12.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	110 W
Breakdown Voltage (Collector to Emitter)	400 V
Continuous Collector Current	12A
hFE Min	10 @5A, 5V
hFE Max	40
Input Power (Max)	110 W
DC Current Gain (hFE)	10
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	110000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BUL89 is a NPN fast-switching Power Transistor manufactured using high voltage Multi Epitaxial Mesa technology for high performance. It uses a hollow emitter structure to enhance switching speeds. It is designed for use in lighting applications and switch-mode power supplies.
Minimum lot-to-lot spread for reliable operation
Low base-drive requirements
Very high switching speed

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- Carefully tested and packaged by ChipWorker
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- Surface testing

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