BUT30V - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BUT30V
Manufacturer

ST Microelectronics
ChipWorker Part#

CW12798309
Category

BJT Transistor, BJT
Package

ISOTOP
Description

ISOTOP NPN 125V 100A
Documentation

Datasheet

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BUT30V Specifications

Attribute	Attribute Value

Part Number	BUT30V
Manufacturer	ST Microelectronics
ChipWorker Part#	CW12798309
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	ISOTOP
Voltage Rating (DC)	125 V
Current Rating	100 A
Load Current	100 A
Number of Positions	4 Position
Polarity	NPN
Power Dissipation	250 W
Breakdown Voltage (Collector to Emitter)	125 V
Continuous Collector Current	100A
hFE Min	27 @100A, 5V
Input Power (Max)	250 W
DC Current Gain (hFE)	27
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250000 mW
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Size-Length	38.2 mm
Size-Width	25.5 mm
Size-Height	9.1 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BUT30V is a NPN Transistor Power Module in a fully insulated package (UL compliant) for easy mounting.
High current power bipolar module
Very low Rth junction case
Specified accidental overload areas
Low internal parasitic inductance

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