BUV20 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BUV20
Manufacturer

ST Microelectronics
ChipWorker Part#

CW120277171
Category

BJT Transistor, BJT
Package

TO-3
Description

Trans GP BJT NPN 125V 50A 3Pin(2+Tab) TO-3 Tube
Documentation

Datasheet

BUV20 Global Supplier

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BUV20 Specifications

Attribute	Attribute Value

Part Number	BUV20
Manufacturer	ST Microelectronics
ChipWorker Part#	CW120277171
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-3
Voltage Rating (DC)	125 V
Current Rating	50.0 A
Power Rating	250 W
Number of Positions	2 Position
Polarity	NPN
Power Dissipation	250 W
Breakdown Voltage (Collector to Emitter)	125 V
hFE Min	20 @25A, 2V
hFE Max	60
Input Power (Max)	250 W
DC Current Gain (hFE)	60
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	250 mW
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Size-Length	39.5 mm
Size-Width	26.2 mm
Size-Height	8.7 mm
Material	Silicon
Operating Temperature	200℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

DESCRIPTION
The BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It is intended for use in switching and linear applications in military and industrial equipment.
■ STMicroelectronics PREFERRED SALESTYPE
■ NPN TRANSISTOR
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
■ HIGH RUGGEDNESS
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
■ SWITCHING REGULATORS

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- Surface testing

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