BUV26G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BUV26G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW12064907
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 90V 20A
Documentation

Datasheet

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BUV26G Specifications

Attribute	Attribute Value

Part Number	BUV26G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW12064907
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	90.0 V
Current Rating	20.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	85 W
Breakdown Voltage (Collector to Emitter)	90 V
Continuous Collector Current	20A
Input Power (Max)	85 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	85000 mW
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Size-Length	10.28 mm
Size-Width	4.82 mm
Size-Height	15.75 mm
Material	Silicon
Operating Temperature	-65℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

The BUV26G is a 90V Silicon NPN Bipolar Power Transistor designed for high speed applications. The transistor is ideal for switch-mode power supplies and high frequency converters as well as relay drivers.
Collector-base voltage (Vcbo = 180V)
Emitter-base voltage (Vcbo = 7V)

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