BUV27G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BUV27G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW18926386
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 120V 12A
Documentation

Datasheet

BUV27G Global Supplier

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BUV27G Specifications

Attribute	Attribute Value

Part Number	BUV27G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW18926386
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	120 V
Current Rating	12.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	70 W
Breakdown Voltage (Collector to Emitter)	120 V
Continuous Collector Current	12A
Input Power (Max)	70 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	70000 mW
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Size-Length	10.53 mm
Size-Width	4.83 mm
Size-Height	15.75 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

NPN Silicon Power Transistor
This device is designed for use in switching regulators and motor control.
Features
• Low Collection Emitter Saturation Voltage
• Fast Switching Speed
• Pb−Free Package is Available

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