C2M0080120D - Wolfspeed

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

C2M0080120D
Manufacturer

Wolfspeed
ChipWorker Part#

CW11910804
Category

High Voltage MOS Transistor
Package

TO-247-3
Description

TO-247 N-CH 1200V 36A
Documentation

Datasheet

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C2M0080120D Specifications

Attribute	Attribute Value

Part Number	C2M0080120D
Manufacturer	Wolfspeed
ChipWorker Part#	CW11910804
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	208 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.08 Ω
Polarity	N-Channel
Power Dissipation	208 W
Threshold Voltage	3.2 V
Drain to Source Voltage (Vds)	1.2 kV
Continuous Drain Current (Ids)	36A
Input Capacitance (Ciss)	950pF @1000V(Vds)
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	208 W
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Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status

Product Description

The C2M0080120D from Cree is a 2nd generation Z-FET, through hole N channel silicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiC MOSFET technology, high blocking voltage with low On resistance, high speed switching with low capacitances, easy to parallel and simple to drive, avalanche ruggedness, resistant to latch up, higher system efficiency, reduced cooling requirements and increased power density. Applications include solar inverters, switch mode power supplies, high voltage DC-DC converters and battery chargers.
Drain to source voltage (Vds) of 1.2kV
Continuous drain current of 36A
Power dissipation of 192W
Operating junction temperature of -55°C to 150°C
Low on state resistance of 80mohm at Vgs of 20V

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