CDCLVC1103PW - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CDCLVC1103PW
Manufacturer

TI
ChipWorker Part#

CW10901063
Category

Clock Buffer, Driver, PLL IC
Package

TSSOP-8
Description

Clock Fanout Buffer 3Out 1IN 1:3 8Pin TSSOP Tube
Documentation

Datasheet

CDCLVC1103PW Global Supplier

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CDCLVC1103PW Specifications

Attribute	Attribute Value

Part Number	CDCLVC1103PW
Manufacturer	TI
ChipWorker Part#	CW10901063
Category	Clock Buffer, Driver, PLL IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	TSSOP-8
Frequency	180 MHz
Supply Voltage (DC)	2.30V ~ 3.60V
Number of Outputs	3 Output
Supply Current	6.00 mA
Number of Circuits	1 Circuit
Number of Positions	8 Position
Output Current Drive	-1.00 mA
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.3V ~ 3.6V
Supply Voltage (Max)	2.7 V
Supply Voltage (Min)	2.3 V
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Size-Width	6.6 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The CDCLVC1103PW is a general-purpose Clock Buffer designed with a modular approach in mind. It is intended to round up TI"s series of LVCMOS clock generators. Seven different fan-out variations, 1:2 to 1:12, are available. The high performing characteristics such as low additive jitter, low skew and wide operating temperature range. The CDCLVC11xx supports an asynchronous output enable control (1G) which switches the outputs into a low state when 1G is low. It operates in a 2.5 and 3.3V environment and is characterized for operation from -40 to 85°C.
High-performance
Low-skew
<50ps Very low pin-to-pin skew
<100fs Very low additive jitter
1:2, 1:3, 1:4, 1:6, 1:8, 1:10 and 1:12 High-performance LVCMOS clock buffer family
Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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