CSD16325Q5 - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD16325Q5
Manufacturer

TI
ChipWorker Part#

CW30361369
Category

MOSFET, MOSFET Transistor
Package

8-VSON-CLIP
Description

SON N-CH 25V 33A
Documentation

Datasheet

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CSD16325Q5 Specifications

Attribute	Attribute Value

Part Number	CSD16325Q5
Manufacturer	TI
ChipWorker Part#	CW30361369
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	8-VSON-CLIP
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	0.0017 Ω
Polarity	N-Channel
Power Dissipation	3.1 W
Threshold Voltage	1.1 V
Drain to Source Voltage (Vds)	25 V
Continuous Drain Current (Ids)	100 A
Rise Time	16 ns
Input Capacitance (Ciss)	4000pF @12.5V(Vds)
Input Power (Max)	3.1 W
Fall Time	12 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.1W (Ta)
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Size-Width	5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status
Packaging	Tape & Reel (TR)
RoHS	Non-Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
APPLICATIONS
Point-of-Load Synchronous Buck in Networking,
Telecom and Computing Systems
Optimized for Synchronous FET Applications
NexFET is a trademark of Texas Instruments.

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