CSD17308Q3 - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD17308Q3
Manufacturer

TI
ChipWorker Part#

CW4885382
Category

MOSFET, MOSFET Transistor
Package

VSON-Clip-8
Description

VSON-CLIP N-CH 30V 50A
Documentation

Datasheet

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CSD17308Q3 Specifications

Attribute	Attribute Value

Part Number	CSD17308Q3
Manufacturer	TI
ChipWorker Part#	CW4885382
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	VSON-Clip-8
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0094 Ω
Polarity	N-Channel
Power Dissipation	2.7 W
Threshold Voltage	1.3 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	50A
Rise Time	5.7 ns
Input Capacitance (Ciss)	700pF @15V(Vds)
Input Power (Max)	2.7 W
Fall Time	2.3 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.7W (Ta)
	expand all
Size-Length	3.4 mm
Size-Width	3.4 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status
Packaging	Tape & Reel (TR)
RoHS	Non-Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.
Top View For all available packages, see the orderable addendum at the end of the data sheet. Typical RθJA = 46°C/W when mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.Max RθJC = 4.5°C/W, pulse duration ≤100 μs, duty cycle ≤1%.
* Optimized for 5-V Gate Drive
* Ultra-Low Qg and Qgd
* Low Thermal Resistance
* Avalanche Rated
* Pb Free Terminal Plating
* RoHS Compliant
* Halogen Free
* VSON 3.3 mm × 3.3 mm Plastic Package
* APPLICATIONS
Notebook Point of Load
Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems

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