CSD17579Q3A - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD17579Q3A
Manufacturer

TI
ChipWorker Part#

CW11692553
Category

MOSFET, MOSFET Transistor
Package

VSONP-8
Description

VSONP N-CH 30V 20A
Documentation

Datasheet

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CSD17579Q3A Specifications

Attribute	Attribute Value

Part Number	CSD17579Q3A
Manufacturer	TI
ChipWorker Part#	CW11692553
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	VSONP-8
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	11.8 mΩ
Polarity	N-CH
Power Dissipation	2.5 W
Threshold Voltage	1.1 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	20A
Rise Time	5 ns
Input Capacitance (Ciss)	998pF @15V(Vds)
Fall Time	1 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	3.2W (Ta), 29W (Tc)
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Size-Length	3.15 mm
Size-Width	3 mm
Size-Height	0.9 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

This 30 V, 8.7 m&ohm;, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

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