CSD18536KTTT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD18536KTTT
Manufacturer

TI
ChipWorker Part#

CW6132614
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

TO-263 N-CH 60V 200A
Documentation

Datasheet

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CSD18536KTTT Specifications

Attribute	Attribute Value

Part Number	CSD18536KTTT
Manufacturer	TI
ChipWorker Part#	CW6132614
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0013 Ω
Polarity	N-Channel
Power Dissipation	375 W
Threshold Voltage	1.8 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	200A
Rise Time	5 ns
Input Capacitance (Ciss)	11430pF @30V(Vds)
Fall Time	4 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	375W (Tc)
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Size-Length	9.25 mm
Size-Height	4.7 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Contains Lead
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

N-Channel 60V 200A (Ta), 349A (Tc) 375W (Tc) Surface Mount DDPAK/TO-263-3

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