CSD18537NQ5AT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD18537NQ5AT
Manufacturer

TI
ChipWorker Part#

CW4413730
Category

MOSFET, MOSFET Transistor
Package

VSON-FET-8
Description

VSONP N-CH 60V 50A
Documentation

Datasheet

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CSD18537NQ5AT Specifications

Attribute	Attribute Value

Part Number	CSD18537NQ5AT
Manufacturer	TI
ChipWorker Part#	CW4413730
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	VSON-FET-8
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.01 Ω
Polarity	N-Channel
Power Dissipation	3.2 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Continuous Drain Current (Ids)	50A
Rise Time	4 ns
Input Capacitance (Ciss)	1140pF @30V(Vds)
Fall Time	3.2 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.2W (Ta), 75W (Tc)
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Size-Length	5.8 mm
Size-Width	4.9 mm
Size-Height	1.1 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The CSD18537NQ5AT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in high-side synchronous buck converter applications.
Ultra-low Qg and Qgd
Low thermal resistance
Avalanche rated
Halogen-free
Plastic package
-55 to 150°C Operating junction temperature range

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