CSD18563Q5AT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD18563Q5AT
Manufacturer

TI
ChipWorker Part#

CW5319903
Category

MOSFET, MOSFET Transistor
Package

VSON-FET-8
Description

VSONP N-CH 60V 100A
Documentation

Datasheet

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CSD18563Q5AT Specifications

Attribute	Attribute Value

Part Number	CSD18563Q5AT
Manufacturer	TI
ChipWorker Part#	CW5319903
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	VSON-FET-8
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0057 Ω
Polarity	N-Channel
Power Dissipation	3.2 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	100A
Rise Time	6.3 ns
Input Capacitance (Ciss)	1150pF @30V(Vds)
Fall Time	1.7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.2W (Ta), 116W (Tc)
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Size-Length	6.1 mm
Size-Width	5 mm
Size-Height	1.1 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The CSD18563Q5AT is a 60V N-channel NexFET™ Power MOSFET designed to minimize losses in power conversion applications. Suitable for DC to DC converters, secondary side synchronous rectifier, battery management and motor control applications.
Ultra low Qg and Qgd
Low thermal resistance
Avalanche rated
Halogen-free
Logic level

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