CSD19501KCS - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD19501KCS
Manufacturer

TI
ChipWorker Part#

CW8460263
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 80V 100A
Documentation

Datasheet

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CSD19501KCS Specifications

Attribute	Attribute Value

Part Number	CSD19501KCS
Manufacturer	TI
ChipWorker Part#	CW8460263
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0055 Ω
Polarity	N-Channel
Power Dissipation	217 W
Threshold Voltage	2.6 V
Drain to Source Voltage (Vds)	80 V
Continuous Drain Current (Ids)	100A
Rise Time	15 ns
Input Capacitance (Ciss)	3980pF @40V(Vds)
Input Power (Max)	217 W
Fall Time	5 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	217W (Tc)
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Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The CSD19501KCS is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in secondary-side synchronous rectifier applications.
Ultra-low Qg and Qgd
Low thermal resistance
Avalanche rated
Halogen-free
Plastic package
-55 to 175°C Operating junction temperature range

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