CSD19531Q5A - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD19531Q5A
Manufacturer

TI
ChipWorker Part#

CW21667861
Category

MOSFET, MOSFET Transistor
Package

VSON-FET-8
Description

VSONP N-CH 100V 100A
Documentation

Datasheet

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CSD19531Q5A Specifications

Attribute	Attribute Value

Part Number	CSD19531Q5A
Manufacturer	TI
ChipWorker Part#	CW21667861
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	VSON-FET-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0053 Ω
Polarity	N-Channel
Power Dissipation	3.3 W
Threshold Voltage	2.7 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	100A
Rise Time	5.8 ns
Input Capacitance (Ciss)	3870pF @50V(Vds)
Fall Time	5.2 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.3W (Ta), 125W (Tc)
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC

Product Description

The CSD19531Q5A is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in primary side telecom and secondary-side synchronous rectifier applications.
Ultra-low Qg and Qgd
Low thermal resistance
Avalanche rated
Halogen-free
Plastic package
-55 to 150°C Operating junction temperature range

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