CSD19532KTT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD19532KTT
Manufacturer

TI
ChipWorker Part#

CW77184400
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

TO-263 N-CH 100V 200A
Documentation

Datasheet

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CSD19532KTT Specifications

Attribute	Attribute Value

Part Number	CSD19532KTT
Manufacturer	TI
ChipWorker Part#	CW77184400
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-263-3
Number of Channels	1 Channel
Polarity	N-CH
Power Dissipation	250 W
Threshold Voltage	2.2 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	200A
Rise Time	3 ns
Maximum Forward Voltage (Max)	1 V
Input Capacitance (Ciss)	5060pF @50V(Vds)
Fall Time	2 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250W (Tc)
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Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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