CSD19532Q5B - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD19532Q5B
Manufacturer

TI
ChipWorker Part#

CW7296735
Category

MOSFET, MOSFET Transistor
Description

VSON-CLIP N-CH 100V 100A
Documentation

Datasheet

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CSD19532Q5B Specifications

Attribute	Attribute Value

Part Number	CSD19532Q5B
Manufacturer	TI
ChipWorker Part#	CW7296735
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	VSON-Clip-8
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.004 Ω
Polarity	N-Channel
Power Dissipation	3.1 W
Threshold Voltage	2.6 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	100A
Rise Time	6 ns
Input Capacitance (Ciss)	4810pF @50V(Vds)
Fall Time	6 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.1W (Ta), 195W (Tc)
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Size-Length	6 mm
Size-Width	5 mm
Size-Height	1 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The CSD19532Q5B is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in synchronous rectifier for offline and isolated DC-to-DC converter applications.
Low Qg and Qgd
Low thermal resistance
Avalanche rated
Halogen-free
Plastic package
-55 to 150°C Operating junction temperature range

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