CSD25310Q2 - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD25310Q2
Manufacturer

TI
ChipWorker Part#

CW6437262
Category

MOSFET, MOSFET Transistor
Package

WSON-FET-6
Description

WSON P-CH 20V 20A
Documentation

Datasheet

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CSD25310Q2 Specifications

Attribute	Attribute Value

Part Number	CSD25310Q2
Manufacturer	TI
ChipWorker Part#	CW6437262
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	WSON-FET-6
Number of Channels	1 Channel
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.0199 Ω
Polarity	P-Channel
Power Dissipation	2.9 W
Threshold Voltage	850 mV
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	20 V
Continuous Drain Current (Ids)	20A
Rise Time	15 ns
Input Capacitance (Ciss)	655pF @10V(Vds)
Fall Time	5 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	40 ℃
Power Dissipation (Max)	2.9W (Ta)
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Size-Length	2 mm
Size-Width	2 mm
Size-Height	0.75 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The CSD25310Q2 is a NexFET™ P-channel Power MOSFET designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a plastic package makes the device ideal for battery operated space constrained operations.
Ultra-low Qg and Qgd
Low ON-resistance
Low thermal resistance
Halogen-free
Plastic package
-55 to 150°C Operating junction temperature range

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