CSD87312Q3E - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD87312Q3E
Manufacturer

TI
ChipWorker Part#

CW2507431
Category

MOSFET, MOSFET Transistor
Package

PowerTDFN-8
Description

VSON N-CH 30V 27A
Documentation

Datasheet

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CSD87312Q3E Specifications

Attribute	Attribute Value

Part Number	CSD87312Q3E
Manufacturer	TI
ChipWorker Part#	CW2507431
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PowerTDFN-8
Number of Channels	2 Channel
Drain to Source Resistance (on) (Rds)	38 mΩ
Polarity	N-CH
Power Dissipation	2.5 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	27A
Rise Time	16 ns
Input Capacitance (Ciss)	1250pF @15V(Vds)
Input Power (Max)	2.5 W
Fall Time	2.9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	2.5 W
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Size-Length	3.3 mm
Size-Width	3.3 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.

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