DMG6602SVT - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

DMG6602SVT
Manufacturer

Diodes
ChipWorker Part#

CW47855235
Package

TSOT-26
Description

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Documentation

Datasheet

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DMG6602SVT Specifications

Attribute	Attribute Value

Part Number	DMG6602SVT
Manufacturer	Diodes
ChipWorker Part#	CW47855235
Documentation	Datasheet
Number of Pins	6 Pin
Case/Package	TSOT-26
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.038 Ω
Power Dissipation	1.12 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	30 V
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
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Operating Temperature	-55℃ ~ 150℃
RoHS	RoHS Compliant
REACH SVHC Compliance Edition	2014/12/17

Product Description

The DMG6602SVT from Diode Inc is a surface mount complementary pair enhancement mode MOSFET in TSOT-26 package. This MOSFET features low input capacitance, fast switching speed and low input/output leakage, designed to minimize the onstate resistance and maintain superior switching performance, making it ideal for high efficiency power management applications and backlighting.
Automotive grade AEC-Q101 qualified
UL recognized
Drain to source voltage (Vds) of 30V
Gate to source voltage (Vgs) of ±20V
Continuous drain current of 3.4A
Power dissipation (Pd) of 1.27W
Operating temperature range -55°C to 150°C
Low on state resistance of 38mohm at Vgs of 10V

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