DS14C88M - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

DS14C88M
Manufacturer

TI
ChipWorker Part#

CW98513329
Category

Interface IC, Interface Controller
Package

SOIC-14
Description

Quad Transmitter RS-232 14Pin SOIC Quad Transmitter RS-232 14Pin SOIC Quad Transmitter RS-232 14Pin SOIC
Documentation

Datasheet

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DS14C88M Specifications

Attribute	Attribute Value

Part Number	DS14C88M
Manufacturer	TI
ChipWorker Part#	CW98513329
Category	Interface IC, Interface Controller
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	14 Pin
Case/Package	SOIC-14
Supply Voltage (DC)	4.50V (min)
Supply Current	0.5 mA
Number of Positions	14 Position
Data Rate	20.0 kbps
Drivers Per Package	4
Output Voltage (Max)	10.5 V
Operating Temperature (Max)	75 ℃
Operating Temperature (Min)	0 ℃
Supply Voltage	4.5V ~ 12.6V
Supply Voltage (Max)	12.6 V
Supply Voltage (Min)	4.5 V
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Operating Temperature	0℃ ~ 70℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17

Product Description

The DS14C88M is a CMOS quad Line Driver with pin-for-pin compatible and is designed to interface data terminal equipment (DTE) with data circuit-terminating equipment (DCE). This device translates standard TTL/CMOS logic levels to levels conforming to EIA-232-D and CCITT V.28 standards. The device is fabricated in low threshold CMOS metal gate technology. The device provides very low power consumption compared to its bipolar equivalents 500µA. The DS14C88 simplifies designs by eliminating the need for external slew rate control capacitors. Slew rate control in accordance with EIA-232D is provided on-chip, eliminating the output capacitors.
Meets EIA-232D and CCITT V.28 standards
Low power consumption
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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