DS26C32ATM - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

DS26C32ATM
Manufacturer

TI
ChipWorker Part#

CW28947863
Category

Interface IC, Interface Controller
Package

SOIC-16
Description

Differential Receiver RS422/RS423, CMOS, Tri-State, 4 Drivers, 4.5V-5.5V supply, SOIC-16
Documentation

Datasheet

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DS26C32ATM Specifications

Attribute	Attribute Value

Part Number	DS26C32ATM
Manufacturer	TI
ChipWorker Part#	CW28947863
Category	Interface IC, Interface Controller
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	16 Pin
Case/Package	SOIC-16
Supply Voltage (DC)	4.50V (min)
Current Rating	25.0 A
Supply Current	16.0 mA
Number of Positions	16 Position
Input Current	1.10 mA
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	4.5V ~ 5.5V
Supply Voltage (Max)	5.5 V
Supply Voltage (Min)	4.5 V
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Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The DS26C32ATM is a CMOS quad differential Line Receiver designed to meet the RS-422, RS-423 and Federal Standards 1020 and 1030 for balanced and unbalanced digital data transmission, while retaining the low power characteristics of CMOS. The DS26C32A has an input sensitivity of 200mV over the common mode input voltage range of ±7V. The receiver features internal pull-up and pull-down resistors which prevent output oscillation on unused channels. The line receiver provides an enable and disable function common to all four receivers. It also features TRI-STATE outputs with 6mA source and sink capability.
CMOS Design for low power
±0.2V Sensitivity over input common mode voltage range
19ns Typical propagation delays
60mV Typical input hysteresis
Inputs won"t load line when VCC = 0V
Meets the requirements of EIA standard RS-422
Tri-state outputs for connection to system buses
Mil-Std-883C Compliant
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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