DTA114EMT2L - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

DTA114EMT2L
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW35708400
Category

BJT Transistor, BJT
Package

VMT-3
Description

VMT PNP 50V 100mA
Documentation

Datasheet

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DTA114EMT2L Specifications

Attribute	Attribute Value

Part Number	DTA114EMT2L
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW35708400
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	VMT-3
Voltage Rating (DC)	-50.0 V
Current Rating	-50.0 mA
Power Rating	0.15 W
Polarity	PNP
Power Dissipation	150 mW
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	20 @5mA, 5V
hFE Max	30
Input Power (Max)	150 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	250 MHz
Power Dissipation (Max)	150 mW
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Size-Length	1.2 mm
Size-Width	0.8 mm
Size-Height	0.5 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 50mA 250MHz 150mW Surface Mount VMT3

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