DTC114EM3T5G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

DTC114EM3T5G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW8930678
Category

BJT Transistor, BJT
Package

SOT-723-3
Description

SOT-723 NPN 50V 100mA
Documentation

Datasheet

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DTC114EM3T5G Specifications

Attribute	Attribute Value

Part Number	DTC114EM3T5G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW8930678
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-723-3
Voltage Rating (DC)	50.0 V
Current Rating	100 mA
Halogen Free Status	Halogen Free
Polarity	NPN
Power Dissipation	0.6 W
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	35 @5mA, 10V
hFE Max	35
Input Power (Max)	260 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	600 mW
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Size-Length	1.25 mm
Size-Width	0.8 mm
Size-Height	0.55 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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