EMG8T2R - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

EMG8T2R
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW30952563
Category

BJT Transistor, BJT
Package

SMD-6
Description

EMT NPN 50V 100mA
Documentation

Datasheet

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EMG8T2R Specifications

Attribute	Attribute Value

Part Number	EMG8T2R
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW30952563
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	SMD-6
Voltage Rating (DC)	50.0 V
Current Rating	100 mA
Power Rating	0.15 W
Polarity	NPN
Power Dissipation	0.15 W
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	80 @10mA, 5V
Input Power (Max)	150 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	250 MHz
Power Dissipation (Max)	150 mW
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Size-Height	0.45 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5

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