EMX1FHAT2R - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

EMX1FHAT2R
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW56197589
Category

BJT Transistor, BJT
Package

SOT-563-6
Description

ROHM EMX1FHAT2R Bipolar Transistor Array, Dual NPN, 50V, 150mW, 150mA, 120 hFE, SOT-563
Documentation

Datasheet

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EMX1FHAT2R Specifications

Attribute	Attribute Value

Part Number	EMX1FHAT2R
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW56197589
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-563-6
Power Rating	0.15 W
Number of Positions	6 Position
Polarity	NPN
Power Dissipation	150 mW
Breakdown Voltage (Collector to Emitter)	50 V
hFE Min	120 @1mA, 6V
hFE Max	560
Input Power (Max)	150 mW
DC Current Gain (hFE)	120
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150 mW
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Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status
ECCN Code	EAR99

Product Description

* AEC-Q101 Qualified
This product is available for evaluation and design in. Please contact your local ROHM office when planning to approve this device.

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